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Quad PIN Diode Attenuator 5 -3000 MHz
MA4P274-1225T
Features
n n n n n n
Package Outline (Topview)
3 2 1
4 PIN Diodes in SOT-25 Plastic Package Externally Selectable Bias and RF Match Network 5 - 3,000 MHz Useable Frequency Band + 43 dBm IP3@ 1 GHz (50 ) 1.0 dB Loss @ 1 GHz (50 ) 30 dB Attenuation @ 1 GHz (50 )
Topview
4 5
Description
M/A-COM's MA4P274-1225 is a wideband, lower insertion loss, high IP3, Quad PIN Diode Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design parasitics and improve circuit density.
PIN Configuration
PIN Function RF In Series Bias RF Out PIN 4 5 Function Shunt 1 Bias Shunt 2 Bias 1 2 3
Applications
These PIN Diode Attenuators perform well where RF Signal Amplitude Control is required in 50 Handset Circuits and 75 Broadband CATV Systems. Exceptional Insertion Loss, Attenuation Range, and IP3 at <10 mA bias make these devices suitable for better power level control in RF Amplifiers.
Guaranteed Electrical Specifications: @ +25 C
Parameter Ct @ 0 V Rs @ 1 mA Rs @ 10 mA Vb Minority Carrier Lifetime Power Dissipation Test Conditions 100 MHz 100 MHz 100 MHz D.C. ( 50 % - 90 % ) Voltage If = + 10mA, Ir = - 6mA Pulse @ 100 kHz Sq Wave D.C. and F = 5 - 3,000 MHz Derate linearly to 0 mW at 125 C Using 1,000 deg-C/W Thermal Resistance F = 5 - 3,000 MHz Vshunt 1 & 2 Diode Bias = 0.75 V Vseries Diode Bias = 0 to 20 V Units pF V nS 125 Min. Typ. 0.45 13 2.3 150 1000 2000 Max. 0.50 18 3.0
mW
100
RF Incident Power
dBm
+ 20
Quad PIN Diode Attenuator Functional Schematic
PIN 2: Series Bias
MA4P274-1225T MA4P274-1225, V 3.00
PIN 3: RF Out
PIN 1: RF In
PIN 4 : Shunt 1 Bias
PIN 5 : Shunt 2 Bias
Case Style: SOT 25
Dim Inches Millimeters
Absolute Maximum Ratings1
Parameter Operating Temperature Storage Temperature, No Dissipated Power DC Voltage at Temperature Extremes DC Current at 25 C Mounting Temperature
Min. A B C D E F G H J .1103 .1023 0.0355 0.0591 .0138 .0031 .0002 .0138
Max. .1181 .1181 .0512 .0669 .0197 0.0079 .0059 .0216
Min. 2.80 2.6 0.9 1.5 .35 .08 .05 .35
Max. 3.10 3.00 1.30 1.70 .50 0.2 .15 .55
Absolute Maximum -65 C to +125 C -65 C to +150 C -100 V 75 mA +235 C for 10 seconds
.0374 REF.
0.95 REF.
1. Exceeding any one or combination of these limits may cause permanent damage.
1.
2.
Dimensions do not include mold peaks, protrusion or gate burrs which shall not exceed 0.0098 in. (.25) mm per side. Leads Coplanarity should be 0.003 (0.08) mm Max.
2
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
Typical 50 SOT-25 RF Performance @ +25 C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter Insertion Loss Frequency Range 5 - 1,000 MHz Test Conditions + 3 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz Within 1 dB of Final Attenuation Value F = 1 GHz 0 - 20 V Series Diode Bias and 0.75 V Shunt 1 and 2 Bias Units dB Min. Typ. -2.0 Max.
Insertion Loss
5 - 1,000 MHz
dB
-1.0
Return Loss
5 - 1,000 MHz
dB
-10
Attenuation
5 - 1,000 MHz
dB
-29
Input IP3
5 - 1,000 MHz
dBm
43
Input IP3
5 - 1,000 MHz
dBm
43
Input IP3
5 - 1,000 MHz
dBm
43
Input IP3
5 - 1,000 MHz
dBm
33
Settling Time RF C.W. Incident Power
5 - 1,000 MHz 5 - 1,000 MHz
uS dBm
3 + 20
Typical 75 SOT-25 RF Performance @ +25 C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter Insertion Loss Frequency Range 5 - 1,000 MHz Test Conditions + 2 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz 0 mA / Series Diode and 1 V Shunt 1 and 2 Bias F = 1 GHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz Units dB Min. Typ. -1.1 Max.
Insertion Loss
5 - 1,000 MHz
dB
-0.6
Attenuation
5 - 1,000 MHz
dB
-27
Return Loss
5 - 1,000 MHz
dB
-10
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
MA4P274-1225 Diode Ct vs Frequency @ 0 V
1.00
MA4P274-1225 Diode Rs vs I
1000
100 MHz 4 MHz
100
10
900 MHz
0.10 1.00 10.00 100.00 F ( MHz ) 1000.00 10000.00
1 0.01 0.10 1.00 I ( mA ) 10.00 100.00
MA4P274-1225 Attenuation vs Frequency in 50 Ohms, Shunt Bias = 0.75 V
-5
MA4P274-1225 Return Loss vs Frequency in 50 Ohms, Shunt Bias = 0.75 V
0
Series Diode: 10 V
-15
Series Diode: 5 V
-5
Series Diode: 1 V
Series Diode: 2 V
-25
-10
Series Diode: 0 V
-35
Series Diode: 3 V Series Diode: 1 V Series Diode: 5 Series Diode: 0 V
-15
-45
-20
-55
Series Diode: 10 V
-25
-65 50 150 250 350 450 550 650 750 850 950
50
150
250
350
450
550
650
750
850
950
Frequency ( MHz )
Frequency ( MHz )
RS vs. IF @ 100 MHz and 1 GHz
LS vs. Frequency @ 10 mA
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
MA4P274-1225 IP3 vs Series Voltage, Vshunt = .075 V
60
55
50
45
F1 = 1000 MHz, F2 = 1100 MHz
40
F1 = 100 MHz, F2 = 110 MHz
35
30
25
20 0 2 4 6 8 10 12 14 16 18 20 Series Diode Voltage ( V )
MA4P274-1225 Insertion Loss vs Frequency in 75 Ohms, Shunt Bias = 1 V
-1.4
MA4P274-1225 Attenuation vs Frequency in 75 Ohms, Shunt Bias = 1 V
-70
-1.2
Series Current per Diode = 2 mA
-60
-1
-50
Series Diode: 0.5 V Series Diode: 0.7 V
-0.8
-40
Series Current per Diode = 4.5 mA
-0.6
-30
-0.4
Series Diode: 1 V
-20
-0.2
Series Diode: 2 V
-10
Series Diode: 3 V
0 20.00 142.50 265.00 387.50 510.00 Frequency (MHz) 632.50 755.00 877.50 1000.00
Series Diode: 20 V
510.00 632.50 755.00 877.50 1000.00
0 20.00 142.50 265.00 387.50
Frequency (MHz)
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
Quad PIN Diode Attenuator 5 - 1,000 MHz Wideband RF Circuit
MA4P274-1225T MA4P274-1225, V 3.00
10K pF 1 K ohms
PIN 2: Series Bias
10K pF
10K pF
PIN 3: RF Out
PIN 1: RF In
1 K ohms
10K pF X2
1 K ohms
PIN 4 : Shunt 1 Bias
PIN 5 : Shunt 2 Bias
Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage ( increases attenuation ) through an otherwise connected Common Anode Bias Node.
10 - 1,000 MHz Wideband RF Circuit Parts List
Item Supplier Supplier P/N
4003 or 4350 Circuit Board 4003 ( r = 3.38), 4350 ( r = 3.48 ) Capacitor, 10 K pF 3.2 mm L x 1.6 mm W x 1.15 mm H Resistor, 1K 1.0 mm L x 0.5 mm w x 0. 25 mm H
Rogers Corporation www.rogers-corp.com Murata www.murata.com Piconics www.piconics.com
RO4003 , RO4350
GRM42-6COH103K25PB C1001BC42KSA
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
6
Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
Series and Shunt Diode Bias Currents as a Function of Vseries and Vshunt Voltage Using Wideband RF Circuit
(Values shown are PER DIODE )
Vshunt Bias ( V ) 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 Vseries Bias ( V ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Iseries Diode ( mA ) 0.000 0.106 0.443 0.773 1.099 1.426 1.750 2.092 2.424 2.756 3.088 3.421 3.754 4.087 4.410 4.743 5.081 5.406 5.750 6.079 6.413 Ishunt Diode ( mA ) 0.192 0.120 0.048 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
1 - 3 GHz 50 , Higher Frequency, Lower Tuning Voltage RF Circuit
0.1 uF
PIN 2: Series Bias Vc = 0 - 5 V
56 pF 100 ohms 330 ohms
56 pF
56 pF
22 nH
22 nH
56pF
PIN 3: RF Out
22 nH 330 ohms 680 pF (2X)
PIN 1: RF In
56 pF 1 K ohms +5V
PIN 4 : Shunt 1 Bias PIN 5 : Shunt 2 Bias
1 K ohms
180 ohms
0.1 uF
180 ohms
Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage through an otherwise connected Common Anode Bias Node.
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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Quad PIN Diode Attenuator 1 - 3 GHz Higher Frequency RF Circuit Parts List
Item
4003 or 4350 Circuit Board 4003 ( r = 3.38), 4350 ( r = 3.48 ) Capacitor, .01 uF, Power Supply Filter 1.6 mm L x 0.80 mm W x .080 mm H Capacitor, 680 pF, Diode RF Bypass 2.0 mm L x 1.5 mm W x .085 mm H Capacitor, 56 pF, D.C. Block, RF Decoupling 1.0 mm L x 0.5 mm W x 0.5 mm H Inductor, 22 nH, RF Choke Resistor, 100 1.0 mm L x 0.5 mm w x 0. 25 mm H Resistor, 180 1.0 mm L x 0.5 mm w x 0. 25 mm H Resistor, 330 1.0 mm L x 0.5 mm w x 0. 25 mm H Resistor, 1K 1.0 mm L x 0.5 mm w x 0. 25 mm H
MA4P274-1225T MA4P274-1225, V 3.00
Supplier
Rogers Corporation www.rogers-corp.com Murata www.murata.com Murata Murata
Supplier P/N
RO4003 , RO4350
GRM39X7R104K25PB GRM40COG681K50PB GRM36COG560K50PB
Coilcraft www.coilcraft.com Piconics www.piconics.com Piconics Piconics Piconics
1812SMS-22NJ C1001BC42KSA
C1800BC42KSA C3300BC42KSA
C1001BC42KSA
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
9
Quad PIN Diode Attenuator
MA4P274-1225T MA4P274-1225, V 3.00
Lumped Model of SOT-25, MA4P274-1225 PIN Diode Quad Attenuator
Port P1 Num=1 L L1 L=0.8 nH C C1 C=0.27pF L L2 L=0.8 nH C C2 C=0.27 pF Port P2 Num=2
C C3 C=0.27 pF
R R3 R=Rjsh Ohm L L4 L=0.8 nH C C5 C=0.05pF R R1 R=Rjse Ohm C C6 C=0.05pF
C C7 C=0.05 pF
R R2 R=Rjse Ohm L L3 L=0.8 nH
C C8 C=0.27 pF
R R4 R=Rjsh Ohm
C C4 C=0.05 pF
C C9 C=0.0003 pF
C C10 C=0.0003 pF
MA4P274-1225 SPICE MODEL
Ordering Information
Model Number MA4P274 -1225 MA4P274 -1225T Tube Tape and Reel Package
Pin Diode Model NLPINM2 Is=1E-14 A Vi=0 V Un=900 cm 2/V-sec Wi=60 um Rr=1.25 Ohm Cmin=0.20 pF Tau=1.0 usec Rs=0.1 Ohm Cjo=0.27 pF Vj=0.7 V M=0.5 Fc=0.5 Imax=2.5E+6 A/m2 Kf=0 Af=1 Ffe=1 wBV= 150 V
Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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